Nonlinear transistor model parameter extraction techniques

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Title:

Author:

Rudolph, Matthias, 1969-

ISBN:

9780521762106

Publication Information:

Cambridge, UK ; New York : Cambridge University Press, 2012.

Physical Description:

xiv, 352 pages : illustrations ; 26 cm.

Series:

The Cambridge RF and microwave engineering series

Cambridge RF and microwave engineering series

Contents:

DC and thermal modeling : III-V FETs and HBTs -- Extrinsic parameter and parasitic elements in III-V HBT and HEMT modeling -- Uncertainties in small-signal equivalent circuit modeling -- The large-signal model : theoretical foundations, practical considerations, and recent trends -- Large and packaged transistors -- Nonlinear characterization and modeling of dispersive effects in high-frequency power transistors -- Optimizing microwave measurements for model construction and validation -- Practical statistical simulation for efficient circuit design -- Noise modeling.

Subject Term:

Transistors -- Mathematical models.

Electronic circuit design.

Added Author:

Rudolph, Matthias, 1969-

Fager, Christian.

Root, David E.

Copies:

Available:*

Library	Material Type	Item Barcode	Shelf Number	Copy	Status
Searching... 1:IIEMSA	1:GEN-BOOK	33168025787827	621.3815 R917N 2012	1	Searching... Unknown

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Summary

Achieve accurate and reliable parameter extraction using this complete survey of state-of-the-art techniques and methods. A team of experts from industry and academia provides you with insights into a range of key topics, including parasitics, intrinsic extraction, statistics, extraction uncertainty, nonlinear and DC parameters, self-heating and traps, noise, and package effects. Learn how similar approaches to parameter extraction can be applied to different technologies. A variety of real-world industrial examples and measurement results show you how the theories and methods presented can be used in practice. Whether you use transistor models for evaluation of device processing and you need to understand the methods behind the models you use, or you want to develop models for existing and new device types, this is your complete guide to parameter extraction.